Analog Integrated Circuits
Start
Sep. 2025
Technologies
Cadence Virtuoso, Calibre Suite
Type
TSMC 65nm process
Last updated
Dec. 2025
The purpose of the ENGG*4080: Micro and Nano-Scale Electronics course was to describe the operating principles of analog integrated micro and nano scale electronic circuits and to teach how to design and use such circuits systems. Course topics include: device and circuit fabrication in silicon operation and layout of active and passive elements, analog and switched-capacitor filters, analog-to-digital converters, oscillators, readout channels for integrated sensors, and analog integrated circuits for embedded applications. The main emphasis is on device models, circuit operation, and design techniques with an extra special emphasis on amplifiers. Dr. Stefano Gregori is very passionate about amplifiers and much of the course was spend working with them.

This course was heavily focused around independent lab work, and the last month of the course was dedicated to a final project completed in pairs. I am very thankful for having the pleasure of working with Eric Yates on the final project. He is simply one of the best computer engineers I have met at the U of G and I was very lucky to have been able to get to know him.

The first lab was all about Schematic entry and circuit simulation. I was dropped in head first into Cadence Virtuoso and this lab was very much a self guided exploration of the tool. Modern day electronic systems and ICs rely heavily on transistors, specifically MOSFETs using CMOS technology. MOSFETs are very versatile devices, and can be used as amplifiers, or switches. When assembled together they can make logic gates, and build large scale ICs. This lab was completed using the TSMC 65-nm CMOS technology. This laboratory was comprised of two experiments that teach the fundamentals of schematic entry and circuit simulation in Cadence Virtuoso. The first part relates to simple n-type and p-type MOSFETs. The seconds relates to a Common-source amplifier making use of the two types of MOSFETs from the first experiment. For the first part two MOSFETS were places on one schematic. They were appropriately wired up with parametric gate-source and drain-source voltages. The Schematic for the NMOS and PMOS can be seen to the right. Then a DC Simulation of the NMOS and PMOS transistors was performed. A portion of the results can be seen below. The purpose of these simulation was to characterize the MOSFETs. Some of the key values are the trans-conductance gm in microsiemens, the drain-source resistance rDS in kilo-ohms, and threshold voltage Vth in millivolts.

Schematic for NMOS and PMOS
Values for gm of a 900nm NMOS
Value of gm = 258.2μS for NMOS and gm = 111.4μS for PMOS with a 900nm width.
Values for rDS of a 900nm NMOS
Value of rDS = 69.1kΩ for NMOS, and rDS = 107.1kΩ for PMOS with a 900nm width which are the inverse of the values at the V1 intercept line.

The second part of this fist lab was producing the schematic and testing a Common-source Amplifier. Using the small signal model of the CS amplifier and some of the values from the simulation in part one the gain of the amp was predicted. The calculated gain was Av = -15.09. Next the voltage gain was measured using transient and AC analysis. These simulation results can be compared with the calculated values above. A DC Simulation of the amplifier was also performed. A portion of the resulting plots from the simulation can be seen below. This simulation was at ambient temperature with no corner cases on the TSMC 65nm process. Additionally in part 2 of the experiment there was an attempt to increase the gain of the amplifier by 20%. A simulation was made this time the width of the transistor M1 was set as parameter and swept from 200nm to 600nm to see if any increases in gain could be made.

Schematic for the Common-source Amplifier
Transient, AC, and DC analysis of the Common-source Amplifier
Transient, AC, and DC analysis of the Common-source Amplifier.
Parametric width simulation from 200nm to 600nm
Parametric width simulation from 200nm to 600nm.
Symbol of the 4-bit successive approximation ADC

The second lab was all about Hardware descriptive languages and Verilog-A. Modern day electronic systems and ICs rely heavily on hardware descriptive languages (HDL). It would be an immense understatement to claim designing complex a IC with a million or more transistors at the schematic level as impractical. Luckily with HDLs like Verilog, and extensions that support analogue behaviour like Verilog-A this task becomes realistic. This second lab included the critical component definition and entry at the behavioural level. The end goal will was to design and implement a 4-bit DAC and ADC. The design for the 4-bit ADC was entered into Virtuoso using Verilog-A The full source code can be seen in the Full lab 2 PDF which is linked below. A symbol for the component was made which can be seen on the left. Creating this symbol for the component defined by Verilog-A lets it be used in a schematic layout too.

Schematic view of test bench for the ADC

This schematic then became very helpful in setting up a test bench to validate the design of the ADC. The ADC takes a single DC voltage as an input. In the case of the test bench seen on the left the input that will be simulated is a smooth ramp input. To power the conversion the ADC also needed 1V of VDD. To scale the binary output it was given a reference of 1V. It also needed a clock pulse as input to trigger a new sample of the input voltage. The final output was a four bit value in binary. An input of 0V should give an output of 0b0000. And any input of 937.5mV or greater results in a full 0b1111.

Simulation results of test bench for the ADC

And sure enough looking at the simulation results that is exactly what was seen! This second lab also had a very similar second part that involved designing a Digital to Analog converter.

The third lab was the last one before the final project. It was all about layout drafting and verification in Virtuoso, the layout was my favourite part of the course by far! The layout process is a fundamental stage to designing any modern day electronic systems and integrated circuits. This lab explored the critical process of taking a schematic level design and translating it to a layout that can be physically realized. The end goal was to design, implement, and simulate the layout of a Common-source Amplifier. A new schematic of the CS amp was entered much like in the first lab. This CS amp was then also given a symbol. And then a test bench was created from the schematic/symbol. This was done to validate the design and to characterize when using ideal NMOS and PMOS FETs

Schematic of the Common-source amplifier.
Symbol of the Common-source Amplifier.
Symbol of the Common-source Amplifier.
Schematic view of test bench for the Common-source Amplifier.
Schematic view of test bench for the Common-source Amplifier.
The next stage was to draw the equivalent layout and minimize the area of the amplifier. The final layout was heavily influenced by the Design Rule Check, as there were many cycles of modifying the layout, re-running the DRC, and fixing new errors that arose. It is worth noting in the final layout, both of the two-finger PMOS transistors are overlaid and share a source to minimize area. The Calibre DRC was a very important part of the layout design. It is an extremely useful tool to ensure all the requirements of the TSMC 65nm process node are kept. After many hours of work I was extremely happy to have the finished layout seen below. The dark blue layers are PO (Polysilicon) layers and for the gate of the the FETs. The teal layer is the lowest metal layer on the TSMC 65nm node. The green squared are interconnects/vias from the higher metal layer down to the substrate. Commonly the via connects the metal layer to the PO or to the red active layer. Depending on whether the red active regions are within the boundary of an n-well or p-well determines it it becomes n+ or p+ doped.
The final layout of the Common-source Amplifier.
The final layout of the Common-source Amplifier.

The layout was considered completed once it passed the DRC (Design Rule Check) and the LVS (Layout vs Schematic) tests. After that parasitic extraction was performed so that the layout may be simulated to account for the geometry selected. The Post-layout simulation plot was then appended to the pre-layout simulation. As seen to the right the AC and DC responses were very close but the transient response was very different.

Post-layout simulation plot appended to the pre-layout simulation.
A peak into the development process for the programmable gain amplifier. Seen on the left is the schematic of the test bench, and the PGA simulation result are on the right.

The final project was much a much more involved process than the labs. I was very lucky to have been able to work with Eric Yates for said project. The task was to fully design the analog portion of a smartwatch for the fictional company Gizmonic. The integrated circuit design for an electrocardiogram (ECG) in a smart watch application was divided into three modules: an analogue multiplexer, a programmable gain amplifier, and a 6-bit analogue to digital converter. The module designs were all to be implemented using the TSMC 65-nm CMOS technology. The watch platform has a RISC core which will provide control signals for the analogue modules. A peak into the development process for the programmable gain amplifier can be seen to the left. This was a very large project and does not lend itself well to summary. The high level top module and be seen below, and for addition details the full project PDF can be viewed.

Schematic of the Top Level.
Schematic of the Top Level.